Direct Comparison of Inverted and Non-inverted Growths of GaInP Solar Cells (Presentation)

PDF Version Also Available for Download.

Description

The motivation for this presentation is that growing inverted cells may enable technological advances in solar cell fabrication, leading to higher efficiencies. Differences in dopant diffusion during inverted vs. upright growths may lead to differences in atomic depth profiles; changes in carrier concentrations; higher contact resistance and lower overall performance. This presentation summarizes that excellent performance is achievable in both upright and inverted configurations with proper consideration; subtle differences in depth profile QE and JV between upright and inverted growths due to dopant diffusion; and GaInAsN contact layer is resilient to length annealing and more work is necessary to determine ... continued below

Physical Description

14 p.

Creation Information

Steiner, M. A.; Geisz, J. F.; Reedy,Jr. R. C. & Kurtz, S. May 1, 2008.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

The motivation for this presentation is that growing inverted cells may enable technological advances in solar cell fabrication, leading to higher efficiencies. Differences in dopant diffusion during inverted vs. upright growths may lead to differences in atomic depth profiles; changes in carrier concentrations; higher contact resistance and lower overall performance. This presentation summarizes that excellent performance is achievable in both upright and inverted configurations with proper consideration; subtle differences in depth profile QE and JV between upright and inverted growths due to dopant diffusion; and GaInAsN contact layer is resilient to length annealing and more work is necessary to determine why.

Physical Description

14 p.

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: NREL/PR-520-43289
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 946619
  • Archival Resource Key: ark:/67531/metadc896820

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 1, 2008

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

Description Last Updated

  • April 3, 2017, 8:11 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 1

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

International Image Interoperability Framework

IIF Logo

We support the IIIF Presentation API

Steiner, M. A.; Geisz, J. F.; Reedy,Jr. R. C. & Kurtz, S. Direct Comparison of Inverted and Non-inverted Growths of GaInP Solar Cells (Presentation), article, May 1, 2008; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc896820/: accessed July 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.