The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-AlloyedModulated Precursor Epitaxy Determined by Transmission Electron Microscopy

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Al(x)Ga(1-x)N layers of varying composition (0.5<x(Al)<1.0) grown in the digitally-alloyed modulated precursor epitaxial regime employing AlN and GaN binary sub-layers by metalorganic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (x(Al)<0.75), a compositional inhomogeniety associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed ... continued below

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Hawkridge, Michael E; Liliental-Weber, Zuzanna; Kim, Hee Jin; Choi, Suk; Yoo, Dongwon; Ryou, Jae-Hyun et al. October 13, 2008.

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Al(x)Ga(1-x)N layers of varying composition (0.5<x(Al)<1.0) grown in the digitally-alloyed modulated precursor epitaxial regime employing AlN and GaN binary sub-layers by metalorganic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (x(Al)<0.75), a compositional inhomogeniety associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed in the context of the growth regime used.

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  • Journal Name: Applied Physics Letters

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  • Report No.: LBNL-1514E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 948504
  • Archival Resource Key: ark:/67531/metadc896732

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  • October 13, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • Sept. 30, 2016, 7:08 p.m.

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Hawkridge, Michael E; Liliental-Weber, Zuzanna; Kim, Hee Jin; Choi, Suk; Yoo, Dongwon; Ryou, Jae-Hyun et al. The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-AlloyedModulated Precursor Epitaxy Determined by Transmission Electron Microscopy, article, October 13, 2008; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc896732/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.