In-Situ observation of wet oxidation kinetics on Si (100) via ambient pressure x-ray photoemission spectroscopy

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The initial stages of wet thermal oxidation of Si(100)-(2x1) have been investigated by in-situ ambient pressure x-ray photoemission spectroscopy (APXPS), including chemical-state resolution via Si 2p core-level spectra. Real-time growth rates of silicon dioxide have been monitored at 100 mTorr of water vapor. This pressure is considerably higher than in any prior study using XPS. Substrate temperatures have been varied between 250 and 500 C. Above a temperature of {approx} 400 C, two distinct regimes, a rapid and a quasi-saturated one, are identified and growth rates show a strong temperature dependence which cannot be explained by the conventional Deal-Grove model.

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Hussain, Zahid; Rossi, Massimiliano; Mun, Bongjin S.; Enta, Yoshiharu; Fadley, Charles S.; Lee, Ki-Suk et al. August 24, 2007.

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The initial stages of wet thermal oxidation of Si(100)-(2x1) have been investigated by in-situ ambient pressure x-ray photoemission spectroscopy (APXPS), including chemical-state resolution via Si 2p core-level spectra. Real-time growth rates of silicon dioxide have been monitored at 100 mTorr of water vapor. This pressure is considerably higher than in any prior study using XPS. Substrate temperatures have been varied between 250 and 500 C. Above a temperature of {approx} 400 C, two distinct regimes, a rapid and a quasi-saturated one, are identified and growth rates show a strong temperature dependence which cannot be explained by the conventional Deal-Grove model.

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  • Journal Name: Journal of Applied Physics; Journal Volume: 103; Journal Issue: 044104

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  • Report No.: LBNL-873E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 936747
  • Archival Resource Key: ark:/67531/metadc896688

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  • August 24, 2007

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  • Sept. 27, 2016, 1:39 a.m.

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  • Jan. 4, 2017, 3:34 p.m.

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Hussain, Zahid; Rossi, Massimiliano; Mun, Bongjin S.; Enta, Yoshiharu; Fadley, Charles S.; Lee, Ki-Suk et al. In-Situ observation of wet oxidation kinetics on Si (100) via ambient pressure x-ray photoemission spectroscopy, article, August 24, 2007; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc896688/: accessed October 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.