Growth and Printability of Multilayer Phase Defects on EUV MaskBlanks

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The ability to fabricate defect-free mask blanks is a well-recognized challenge in enabling extreme ultraviolet lithography (EUVL) for semiconductor manufacturing. Both the specification and reduction of defects necessitate the understanding of their printability and how they are generated and grow during Mo-Si multilayer (ML) deposition. A ML phase defect can be depicted by its topographical profile on the surface as either a bump or pit, which is then characterized by height or depth and width. The complexity of such seemingly simple phase defects lies in the many ways they can be generated and the difficulties of measuring their physical shape/size ... continued below

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Liang, Ted; Ultanir, Erdem; Zhnag, Guojing; Park, Seh-Jin; Anderson, Erik; Gullikson, Eric et al. June 10, 2007.

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Description

The ability to fabricate defect-free mask blanks is a well-recognized challenge in enabling extreme ultraviolet lithography (EUVL) for semiconductor manufacturing. Both the specification and reduction of defects necessitate the understanding of their printability and how they are generated and grow during Mo-Si multilayer (ML) deposition. A ML phase defect can be depicted by its topographical profile on the surface as either a bump or pit, which is then characterized by height or depth and width. The complexity of such seemingly simple phase defects lies in the many ways they can be generated and the difficulties of measuring their physical shape/size and optical effects on printability. An effective way to study phase defects is to use a programmed defect mask (PDM) as 'model' test sample where the defects are produced with controlled growth on a ML blank and accurate placement in varying proximity to absorber patterns on the mask. This paper describes our recent study of ML phase defect printability with resist data from exposures of a ML PDM on the EUV micro-exposure tool (MET, 5X reduction with 0.3NA).

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  • EIPBN 2007, Denver, CO, May 29 - June 1,2007

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  • Report No.: LBNL--63602
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 932572
  • Archival Resource Key: ark:/67531/metadc896660

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  • June 10, 2007

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  • Sept. 27, 2016, 1:39 a.m.

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Liang, Ted; Ultanir, Erdem; Zhnag, Guojing; Park, Seh-Jin; Anderson, Erik; Gullikson, Eric et al. Growth and Printability of Multilayer Phase Defects on EUV MaskBlanks, article, June 10, 2007; United States. (digital.library.unt.edu/ark:/67531/metadc896660/: accessed August 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.