Hybrid MOSFET/Driver for Ultra-Fast Switching

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The ultra-fast switching of power MOSFETs, in {approx}1ns, is very challenging. This is largely due to the parasitic inductance that is intrinsic to commercial packages used for both MOSFETs and drivers. Parasitic gate and source inductance not only limit the voltage rise time on the MOSFET internal gate structure but can also cause the gate voltage to oscillate. This paper describes a hybrid approach that substantially reduces the parasitic inductance between the driver and MOSFET gate as well as between the MOSFET source and its external connection. A flip chip assembly is used to directly attach the die-form power MOSFET ... continued below

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3 pages

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Tang, T; Burkhart, C. & /SLAC July 11, 2008.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 12 times . More information about this article can be viewed below.

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Description

The ultra-fast switching of power MOSFETs, in {approx}1ns, is very challenging. This is largely due to the parasitic inductance that is intrinsic to commercial packages used for both MOSFETs and drivers. Parasitic gate and source inductance not only limit the voltage rise time on the MOSFET internal gate structure but can also cause the gate voltage to oscillate. This paper describes a hybrid approach that substantially reduces the parasitic inductance between the driver and MOSFET gate as well as between the MOSFET source and its external connection. A flip chip assembly is used to directly attach the die-form power MOSFET and driver on a PCB. The parasitic inductances are significantly reduced by eliminating bond wires and minimizing lead length. The experimental results demonstrate ultra-fast switching of the power MOSFET with excellent control of the gate-source voltage.

Physical Description

3 pages

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  • Presented at2008 IEEE International Power Modulator Conference, Las Vegas, NV, 5/27/2008-5/31/2008

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  • Report No.: SLAC-PUB-13269
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 934743
  • Archival Resource Key: ark:/67531/metadc896575

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  • July 11, 2008

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

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  • Nov. 29, 2016, 1:43 p.m.

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Tang, T; Burkhart, C. & /SLAC. Hybrid MOSFET/Driver for Ultra-Fast Switching, article, July 11, 2008; [Menlo Park, California]. (digital.library.unt.edu/ark:/67531/metadc896575/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.