EUV mask reflectivity measurements with micron-scale spatial resolution

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The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. We describe the unique measurement capabilities of a prototype actinic (EUV wavelength) microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. Types of defects: (a) Buried Substrate Defects: particles & pits (causes amplitude and/or phase variations); (b) Surface Contamination (reduces reflectivity and (possibly) contrast); (c) Damage from Inspection and Use (reduces the reflectivity of the multilayer coating). This paper presents an overview of several ... continued below

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Goldberg, Kenneth A.; Rekawa, S.B.; Kemp, C.D.; Barty, A.; Anderson, E.H.; Kearney, Patrick et al. May 26, 2008.

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The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection sensitivity of advanced mask inspection tools, operating at several wavelengths. We describe the unique measurement capabilities of a prototype actinic (EUV wavelength) microscope that is capable of detecting small defects and reflectivity changes that occur on the scale of microns to nanometers. Types of defects: (a) Buried Substrate Defects: particles & pits (causes amplitude and/or phase variations); (b) Surface Contamination (reduces reflectivity and (possibly) contrast); (c) Damage from Inspection and Use (reduces the reflectivity of the multilayer coating). This paper presents an overview of several topics where scanning actinic inspection makes a unique contribution to EUVL research. We describe the role of actinic scanning inspection in four cases: defect repair studies; observations of laser damage; after scanning electron microscopy; and native and programmed defects.

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  • SPIE BACUS, Monterey, CA, 10/07-10/10/08

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  • Report No.: LBNL-1206E
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 942140
  • Archival Resource Key: ark:/67531/metadc896541

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 26, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 2, 2017, 12:40 p.m.

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Goldberg, Kenneth A.; Rekawa, S.B.; Kemp, C.D.; Barty, A.; Anderson, E.H.; Kearney, Patrick et al. EUV mask reflectivity measurements with micron-scale spatial resolution, article, May 26, 2008; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc896541/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.