Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers

PDF Version Also Available for Download.

Description

In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB ... continued below

Physical Description

12 p. (0.5 MB)

Creation Information

Pocha, M D; Goddard, L L; Bond, T C; Nikolic, R J; Vernon, S P; Kallman, J S et al. January 3, 2007.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.

Physical Description

12 p. (0.5 MB)

Notes

PDF-file: 12 pages; size: 0.5 Mbytes

Source

  • Journal Name: IEEE Journal of Quantum Electronics, vol. 43, no. 10, October 1, 2007, pp. 860-868; Journal Volume: 43; Journal Issue: 10

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: UCRL-JRNL-227058
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 940495
  • Archival Resource Key: ark:/67531/metadc895436

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • January 3, 2007

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

Description Last Updated

  • April 13, 2017, 3:44 p.m.

Usage Statistics

When was this article last used?

Congratulations! It looks like you are the first person to view this item online.

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Pocha, M D; Goddard, L L; Bond, T C; Nikolic, R J; Vernon, S P; Kallman, J S et al. Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers, article, January 3, 2007; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc895436/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.