Investigation of Junction Properties in CdS/CdTe Solar Cells and Their Correlation to Device Properties: Preprint

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Secondary-ion mass spectrometry analysis of the CdS/CdTe interface shows that S diffusion in CdTe increases with substrate temperature and CdCl2 heat treatment. There is also an accumulation of Cl at the interface for CdCl2-treated samples. Modulated photo-reflectance studies shows that devices with CdCl2 heat treatment and open-circuit voltage (Voc) of 835 mV have a distinct high electric-field region in the layer with bandgap of 1.45 eV. Electron-beam induced current measurements reveal a one-sided junction for high Voc devices. The nature of the junction changes with processing. For heterojunction devices, the depletion region includes the highly defective CdS/CdTe interface, which would ... continued below

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8 p.

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Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B. et al. May 1, 2008.

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Secondary-ion mass spectrometry analysis of the CdS/CdTe interface shows that S diffusion in CdTe increases with substrate temperature and CdCl2 heat treatment. There is also an accumulation of Cl at the interface for CdCl2-treated samples. Modulated photo-reflectance studies shows that devices with CdCl2 heat treatment and open-circuit voltage (Voc) of 835 mV have a distinct high electric-field region in the layer with bandgap of 1.45 eV. Electron-beam induced current measurements reveal a one-sided junction for high Voc devices. The nature of the junction changes with processing. For heterojunction devices, the depletion region includes the highly defective CdS/CdTe interface, which would increase the recombination current and consequently the dark current, leading to lower Voc. In the case of CdCl2-treated cells, the n+-p junction and its high electric-field results in the junction between structurally compatible CdTe and the Te-rich CdSTe alloy, and thus, in higher Voc.

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8 p.

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  • Presented at the 33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008, San Diego, California

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  • Report No.: NREL/CP-520-42567
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 929607
  • Archival Resource Key: ark:/67531/metadc894954

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  • May 1, 2008

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  • Sept. 27, 2016, 1:39 a.m.

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  • April 6, 2017, 2:04 p.m.

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Dhere, R. G.; Zhang, Y.; Romero, M. J.; Asher, S. E.; Young, M.; To, B. et al. Investigation of Junction Properties in CdS/CdTe Solar Cells and Their Correlation to Device Properties: Preprint, article, May 1, 2008; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc894954/: accessed December 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.