Sculpting the shape of semiconductor heteroepitaxial islands: fromdots to rods

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In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.

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Robinson, J.T.; Walko, D.A.; Arms, D.A.; Tinberg, D.S.; Evans,P.G.; Cao, Y. et al. June 20, 2006.

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In the Ge on Si model heteroepitaxial system, metal patterns on the silicon surface provide unprecedented control over the morphology of highly ordered Ge islands. Island shape including nanorods and truncated pyramids is set by the metal species and substrate orientation. Analysis of island faceting elucidates the prominent role of the metal in promoting growth of preferred facet orientations while investigations of island composition and structure reveal the importance of Si-Ge intermixing in island evolution. These effects reflect a remarkable combination of metal-mediated growth phenomena that may be exploited to tailor the functionality of island arrays in heteroepitaxial systems.

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  • Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 10; Related Information: Journal Publication Date: 3/9/2007

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  • Report No.: LBNL--62554
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 923465
  • Archival Resource Key: ark:/67531/metadc894433

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  • June 20, 2006

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  • Sept. 27, 2016, 1:39 a.m.

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  • Oct. 31, 2016, 3:58 p.m.

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Robinson, J.T.; Walko, D.A.; Arms, D.A.; Tinberg, D.S.; Evans,P.G.; Cao, Y. et al. Sculpting the shape of semiconductor heteroepitaxial islands: fromdots to rods, article, June 20, 2006; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc894433/: accessed November 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.