Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt

PDF Version Also Available for Download.

Description

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging ... continued below

Physical Description

2036 words

Creation Information

Dr. R. K. Pandey, Cudworth Endowed Professor (Professor Emeritus of The Unviersity of Alabama) Ingram Endowed Professor, Ingram School of Engineering and Physics Department, Texas State University, San Marocs, TX78666 November 24, 2008.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

The objective of this research was to investigate the viability of oxide magnetic semiconductors as potential materials for spintronics. We identified some members of the solid solution series of ilmenite (FeTiO3) and hematite (Fe2O3), abbreviated as (IH) for simplicity, for our investigations based on their ferromagnetic and semiconducting properties. With this objective in focus we limited our investigations to the following members of the modified Fe-titanates: IH33 (ilmenitehematite with 33 atomic percent hematite), IH45 (ilmenite-hematite with 45 atomic percent hematite), Mn-substituted ilmenite (Mn-FeTiO3), and Mn-substituted pseudobrookite (Mn- Fe2TiO5). All of them are: 1. wide bandgap semiconductors with band gaps ranging in values between 2.5 to 3.5 eV; 2. n-type semiconductors; 3.they exhibit well defined magnetic hysteresis loops and 4. their magnetic Curie points are greater than 400K. Ceramic, film and single crystal samples were studied and based on their properties we produced varistors (also known as voltage dependent resistors) for microelectronic circuit protection from power surges, three-terminal microelectronic devices capable of generating bipolar currents, and an integrated structured device with controlled magnetic switching of spins. Eleven refereed journal papers, three refereed conference papers and three invention disclosures resulted from our investigations. We also presented invited papers in three international conferences and one national conference. Furthermore two students graduated with Ph.D. degrees, three with M.S. degrees and one with B.S. degree. Also two post-doctoral fellows were actively involved in this research. We established the radiation hardness of our devices in collaboration with a colleague in an HBCU institution, at the Cyclotron Center at Texas A&M University, and at DOE National Labs (Los Alamos and Brookhaven). It is to be appreciated that we met most of our goals and expanded vastly the scope of research by including investigations of Mn-FeTiO3, Mn-Fe2TiO5 and by producing a novel three terminal device capable of generating bipolar currents besides producing radiation resistant varistors and a magnetically switchable device. Furthermore we conclusively established the radiation hardness of the four modified iron titanates we studied. In all our publications, conference and seminar presentations, dissertations and theses sponsorship of DOE has been acknowledged

Physical Description

2036 words

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Report No.: Revised Final Report
  • Grant Number: FG02-03ER46039
  • DOI: 10.2172/941537 | External Link
  • Office of Scientific & Technical Information Report Number: 941537
  • Archival Resource Key: ark:/67531/metadc893368

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • November 24, 2008

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

Usage Statistics

When was this report last used?

Congratulations! It looks like you are the first person to view this item online.

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Dr. R. K. Pandey, Cudworth Endowed Professor (Professor Emeritus of The Unviersity of Alabama) Ingram Endowed Professor, Ingram School of Engineering and Physics Department, Texas State University, San Marocs, TX78666. Oxide Ferromagnetic Semiconductors for Spin-Electronic Transprt, report, November 24, 2008; United States. (digital.library.unt.edu/ark:/67531/metadc893368/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.