Identifying semiconductors by d.c. ionization conductivity

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We describe a method for identifying semiconductor radiationdetector materials based on the mobility of internally generatedelectrons and holes. It was designed for the early stages of exploration,when samples are not available as single crystals, but as crystallinepowders. Samples are confined under pressure in an electric field and theincrease in current resulting from exposure to a high-intensity source of60Co gamma rays (i.e. the ionization current) is measured. We find thatfor known semiconductors the d.c. ionization current depends on voltageaccording to the Hecht equation, and for known insulators the d.c.ionization current is below our detection limits. This shows that themethod can identify ... continued below

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Derenzo, Stephen E.; Bourret-Courchesne, Edith; James, Floyd J.; Klintenberg, Mattias K.; Porter-Chapman, Yetta; Wang, Jie et al. April 1, 2006.

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Description

We describe a method for identifying semiconductor radiationdetector materials based on the mobility of internally generatedelectrons and holes. It was designed for the early stages of exploration,when samples are not available as single crystals, but as crystallinepowders. Samples are confined under pressure in an electric field and theincrease in current resulting from exposure to a high-intensity source of60Co gamma rays (i.e. the ionization current) is measured. We find thatfor known semiconductors the d.c. ionization current depends on voltageaccording to the Hecht equation, and for known insulators the d.c.ionization current is below our detection limits. This shows that themethod can identify semiconductors in spite of significant carriertrapping. Using this method, we have determined that BiOI, PbIF,BiPbO2Cl, BiPbO2Br, BiPbO2I, Bi2GdO4Cl, Pb3O2I2, and Pb5O4I2 aresemiconductors.

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  • Journal Name: IEEE Transactions Nuclear Science; Journal Volume: 2; Journal Issue: 23-29; Related Information: Journal Publication Date: 10/2005

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  • Report No.: LBNL--60796
  • Grant Number: DE-AC02-05CH11231
  • Grant Number: NIHEB00399
  • Office of Scientific & Technical Information Report Number: 920344
  • Archival Resource Key: ark:/67531/metadc893285

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  • April 1, 2006

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  • Sept. 27, 2016, 1:39 a.m.

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  • Sept. 29, 2016, 2:52 p.m.

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Derenzo, Stephen E.; Bourret-Courchesne, Edith; James, Floyd J.; Klintenberg, Mattias K.; Porter-Chapman, Yetta; Wang, Jie et al. Identifying semiconductors by d.c. ionization conductivity, article, April 1, 2006; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc893285/: accessed August 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.