Direct Comparison of Inverted and Non-Inverted Growths of GaInP Solar Cells: Preprint

PDF Version Also Available for Download.

Description

The inverted growth of III-V solar cells presents some specific challenges that are not present in regular, non-inverted growths. Because the highly doped top contact layer is grown first, followed by the lengthy high-temperature growth of the remainder of the structure, there is ample time for the dopants in the contact layer to diffuse away. This leads to an increase in the contact resistance to the top layer, and a corresponding drop in voltage. The diffusion of dopants in other layers is similarly altered with respect to the non-inverted configuration because of the change in growth sequence. We compare the ... continued below

Physical Description

9 p.

Creation Information

Steiner, M. A.; Geisz, J. F.; Reedy Jr, R.C. & Kurtz, S. May 1, 2008.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

The inverted growth of III-V solar cells presents some specific challenges that are not present in regular, non-inverted growths. Because the highly doped top contact layer is grown first, followed by the lengthy high-temperature growth of the remainder of the structure, there is ample time for the dopants in the contact layer to diffuse away. This leads to an increase in the contact resistance to the top layer, and a corresponding drop in voltage. The diffusion of dopants in other layers is similarly altered with respect to the non-inverted configuration because of the change in growth sequence. We compare the dopant profiles of inverted and non-inverted structures by using secondary ion mass spectroscopy and correlate the results with the observed performance of the devices. We also describe a technique for growing a GaInAsN contact layer in the inverted configuration and show that it achieves a specific contact resistance comparable to what is normally observed in non-inverted cells.

Physical Description

9 p.

Source

  • Presented at the 33rd IEEE Photovoltaic Specialists Conference, 11-16 May 2008, San Diego, California

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: NREL/CP-520-42559
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 929626
  • Archival Resource Key: ark:/67531/metadc893026

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 1, 2008

Added to The UNT Digital Library

  • Sept. 27, 2016, 1:39 a.m.

Description Last Updated

  • April 6, 2017, 3:27 p.m.

Usage Statistics

When was this article last used?

Congratulations! It looks like you are the first person to view this item online.

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Steiner, M. A.; Geisz, J. F.; Reedy Jr, R.C. & Kurtz, S. Direct Comparison of Inverted and Non-Inverted Growths of GaInP Solar Cells: Preprint, article, May 1, 2008; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc893026/: accessed September 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.