Metal-inducd assembly of a semiconductor-island lattice: Getruncated pyramids on Au-patterned Si Metadata

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Title

  • Main Title Metal-inducd assembly of a semiconductor-island lattice: Getruncated pyramids on Au-patterned Si

Creator

  • Author: Robinson, J.T.
    Creator Type: Personal
  • Author: Liddle, J.A.
    Creator Type: Personal
  • Author: Minor, A.
    Creator Type: Personal
  • Author: Radmilovic, V.
    Creator Type: Personal
  • Author: Yi,D.O.
    Creator Type: Personal
  • Author: Greaney, P.A.
    Creator Type: Personal
  • Author: Long, K.N.
    Creator Type: Personal
  • Author: Chrzan, D.C.
    Creator Type: Personal
  • Author: Dubon, O.D.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy. Office of Basic Energy Sciences.
    Contributor Type: Organization
    Contributor Info: USDOE Director. Office of Science. Office of Basic Energy Sciences

Publisher

  • Name: Lawrence Berkeley National Laboratory
    Place of Publication: Berkeley, California
    Additional Info: "Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States)"

Date

  • Creation: 2005-08-28

Language

  • English

Description

  • Content Description: We report the two-dimensional alignment of semiconductor islands using rudimentary metal patterning to control nucleation and growth. In the Ge on Si system, a square array of sub-micron Au dots on the Si (001) surface induces the assembly of deposited Ge adatoms into an extensive island lattice. Remarkably, these highly ordered Ge islands form between the patterned Au dots and are characterized by a unique truncated pyramidal shape. A model based on patterned diffusion barriers explains the observed ordering and establishes general criteria for the broader applicability of such a directed assembly process to quantum dot ordering.

Subject

  • Keyword: Shape
  • STI Subject Categories: 36 Materials Science
  • Keyword: Diffusion Barriers
  • Keyword: Nucleation
  • Keyword: Quantum Dots
  • Keyword: Alignment

Source

  • Journal Name: Nano Letters; Journal Volume: 5; Journal Issue: 10; Related Information: Journal Publication Date: Oct. 2005

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: LBNL--58967
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 885245
  • Archival Resource Key: ark:/67531/metadc892927