title: Metal-induced assembly of a semiconductor-island lattice: Getruncated
 pyramids on Au-patterned Si
creator: Robinson, J. T.
creator: Liddle, J. A.
creator: Minor, A.
creator: Radmilovic, V.
creator: Yi, D. O.
creator: Greaney, P. A.
creator: Long, K. N.
creator: Chrzan, D. C.
creator: Dubon, O. D.
contributor: United States. Department of Energy. Office of Basic Energy
 Sciences.
publisher: Lawrence Berkeley National Laboratory
date: 2005-08-28
language: English
description: We report the two-dimensional alignment of semiconductor islands
 using rudimentary metal patterning to control nucleation and growth. In the Ge
 on Si system, a square array of sub-micron Au dots on the Si (001) surface
 induces the assembly of deposited Ge adatoms into an extensive island lattice.
 Remarkably, these highly ordered Ge islands form between the patterned Au dots
 and are characterized by a unique truncated pyramidal shape. A model based on
 patterned diffusion barriers explains the observed ordering and establishes
 general criteria for the broader applicability of such a directed assembly
 process to quantum dot ordering.
subject: Shape
subject: 36 Materials Science
subject: Diffusion Barriers
subject: Nucleation
subject: Quantum Dots
subject: Alignment
source: Journal Name: Nano Letters; Journal Volume: 5; Journal Issue: 10;
 Related Information: Journal Publication Date: Oct. 2005
type: Article
format: Text
identifier: rep-no: LBNL--58967
identifier: grantno: DE-AC02-05CH11231
identifier: osti: 885245
identifier: https://digital.library.unt.edu/ark:/67531/metadc892927/
identifier: ark: ark:/67531/metadc892927