Metal-inducd assembly of a semiconductor-island lattice: Getruncated pyramids on Au-patterned Si Page: 1 of 16
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Metal-induced assembly of a semiconductor-island
lattice: Ge truncated pyramids on Au-patterned Si
J.T. Robinsoni,2, J.A. Liddle2, A. Minor, V. Radmilovic3, D. O. Yi4, P. Alex Greaney2, K. N. Long" , D.
C. Chrzan",2 and O.D. Dubonl,2*
1Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
3National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA
4Applied Science and Technology, University of California, Berkeley, CA 94720.
* Corresponding Author. E-mail: firstname.lastname@example.org
We report the two-dimensional alignment of semiconductor islands using rudimentary metal patterning
to control nucleation and growth. In the Ge on Si system, a square array of sub-micron Au dots on the
Si (001) surface induces the assembly of deposited Ge adatoms into an extensive island lattice.
Remarkably, these highly ordered Ge islands form between the patterned Au dots and are characterized
by a unique truncated pyramidal shape. A model based on patterned diffusion barriers explains the
observed ordering and establishes general criteria for the broader applicability of such a directed
assembly process to quantum dot ordering.
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Robinson, J.T.; Liddle, J.A.; Minor, A.; Radmilovic, V.; Yi,D.O.; Greaney, P.A. et al. Metal-inducd assembly of a semiconductor-island lattice: Getruncated pyramids on Au-patterned Si, article, August 28, 2005; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc892927/m1/1/: accessed March 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.