Microstructural Evolution Based on Fundamental Interfacial Properties

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This first CMSN project has been operating since the summer of 1999. The main achievement of the project was to bring together a community of materials scientists, physicists and mathematicians who share a common interest in the properties of interfaces and the impact of those properties on microstructural evolution. Six full workshops were held at Carnegie Mellon (CMU), Northwestern (NWU), Santa Fe, Northeastern University (NEU), National Institute for Standards and Technology (NIST), Ames Laboratory, and at the University of California in San Diego (UCSD) respectively. Substantial scientific results were obtained through the sustained contact between the members of the project. ... continued below

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388k

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Rollett, A. D.; Srolovitz, D. J. & Karma, A. July 11, 2003.

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Description

This first CMSN project has been operating since the summer of 1999. The main achievement of the project was to bring together a community of materials scientists, physicists and mathematicians who share a common interest in the properties of interfaces and the impact of those properties on microstructural evolution. Six full workshops were held at Carnegie Mellon (CMU), Northwestern (NWU), Santa Fe, Northeastern University (NEU), National Institute for Standards and Technology (NIST), Ames Laboratory, and at the University of California in San Diego (UCSD) respectively. Substantial scientific results were obtained through the sustained contact between the members of the project. A recent issue of Interface Science (volume 10, issue 2/3, July 2002) was dedicated to the output of the project. The results include: the development of methods for extracting anisotropic boundary energy and mobility from molecular dynamics simulations of solid/liquid interfaces in nickel; the extraction of anisotropic energies and mobilities in aluminum from similar MD simulations; the application of parallel computation to the calculation of interfacial properties; the development of a method to extract interfacial properties from the fluctuations in interface position through consideration of interfacial stiffness; the use of anisotropic interface properties in studies of abnormal grain growth; the discovery of abnormal grain growth from random distributions of orientation in subgrain networks; the direct comparison at the scale of individual grains between experimentally observed grain growth and simulations, which confirmed the importance of including anisotropic interfacial properties in the simulations; the classification of a rich variety of dendritic morphologies based on slight variations in the anisotropy of the solid-liquid interface; development of phase field methods that permit both solidification and grain growth to be simulated within the same framework.

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388k

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  • Report No.: DOE/ER/45882-1
  • Grant Number: FG02-01ER45882
  • DOI: 10.2172/883040 | External Link
  • Office of Scientific & Technical Information Report Number: 883040
  • Archival Resource Key: ark:/67531/metadc892891

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • July 11, 2003

Added to The UNT Digital Library

  • Sept. 23, 2016, 2:42 p.m.

Description Last Updated

  • Nov. 7, 2016, 3:09 p.m.

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Rollett, A. D.; Srolovitz, D. J. & Karma, A. Microstructural Evolution Based on Fundamental Interfacial Properties, report, July 11, 2003; United States. (digital.library.unt.edu/ark:/67531/metadc892891/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.