Silicon-Germanium Films Deposited by Low Frequency PE CVD: Effect of H2 and Ar Dilution

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We have studied structure and electrical properties of Si{sub 1-Y}Ge{sub Y}:H films deposited by low frequency PE CVD over the entire composition range from Y=0 to Y=1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H{sub 2}. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found: (1) The deposition rate increased with Y maximizing ... continued below

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Kosarev, A; Torres, A; Hernandez, Y; Ambrosio, R; Zuniga, C; Felter, T E et al. September 22, 2005.

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We have studied structure and electrical properties of Si{sub 1-Y}Ge{sub Y}:H films deposited by low frequency PE CVD over the entire composition range from Y=0 to Y=1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H{sub 2}. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found: (1) The deposition rate increased with Y maximizing at Y=1 without dilution. (2) The relative rate of Ge and Si incorporation is affected by dilution. (3) Hydrogen preferentially bonds to silicon. (4) Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge, i.e. the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity {gamma}-factor suggests a local minimum in the density of states at E {approx} 0.33 eV for the films grown with or without H-dilution and E {approx} 0.25 eV for the films with Ar dilution.

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PDF-file: 57 pages; size: 0 Kbytes

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  • Journal Name: Journal of the Materials Research Society; Journal Volume: 21; Journal Issue: 1

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  • Report No.: UCRL-JRNL-215632
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 885143
  • Archival Resource Key: ark:/67531/metadc892817

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  • September 22, 2005

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  • Sept. 23, 2016, 2:42 p.m.

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  • Dec. 8, 2016, 11:03 p.m.

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Kosarev, A; Torres, A; Hernandez, Y; Ambrosio, R; Zuniga, C; Felter, T E et al. Silicon-Germanium Films Deposited by Low Frequency PE CVD: Effect of H2 and Ar Dilution, article, September 22, 2005; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc892817/: accessed October 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.