17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact

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Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (<150 deg C) intrinsic a-Si:H deposition which ensures immediate amorphous silicon deposition. This is followed by deposition of doped a-Si:H at a higher temperature (>200 deg C) which appears to improve dopant activation. With an i/n a-Si:H emitter, we obtain a confirmed efficiency of 17.1% on textured p-type float-zone (FZ) silicon with a screen-printed aluminum back-surface-field (Al-BSF) contact. Employing ... continued below

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Wang, T. H.; Page, M. R.; Iwaniczko, E.; Wang, Q.; Xu,Y.; Yan, Y. et al. November 1, 2005.

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Thin hydrogenated amorphous silicon (a-Si:H) layers deposited by hot-wire chemical vapor deposition (HWCVD) are used as both emitters and back contacts in silicon heterojunction solar cells. Low interface recombination velocity and high open-circuit voltage are achieved by a low substrate temperature (<150 deg C) intrinsic a-Si:H deposition which ensures immediate amorphous silicon deposition. This is followed by deposition of doped a-Si:H at a higher temperature (>200 deg C) which appears to improve dopant activation. With an i/n a-Si:H emitter, we obtain a confirmed efficiency of 17.1% on textured p-type float-zone (FZ) silicon with a screen-printed aluminum back-surface-field (Al-BSF) contact. Employing a-Si:H as both the front emitter and the back contact, we achieve a confirmed efficiency of 17.5%, the highest reported efficiency for a p-type c-Si based heterojunction solar cell.

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5 p.

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  • Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)

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  • Report No.: NREL/CP-520-38942
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 882612
  • Archival Resource Key: ark:/67531/metadc892630

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  • November 1, 2005

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  • Sept. 23, 2016, 2:42 p.m.

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  • April 6, 2017, 12:34 p.m.

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Wang, T. H.; Page, M. R.; Iwaniczko, E.; Wang, Q.; Xu,Y.; Yan, Y. et al. 17.5% p-Type Silicon Heterojunction Solar Cells with HWCVD a-Si:H as the Emitter and Back Contact, article, November 1, 2005; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc892630/: accessed December 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.