Stable, free-standing Ge nanocrystals

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Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional ... continued below

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Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z. et al. January 28, 2005.

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Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional amorphous-like contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms.

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  • Journal Name: Applied Physics Letters; Journal Volume: 97; Related Information: Journal Publication Date: 2005

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  • Report No.: LBNL--56951
  • Grant Number: DE-AC02-05CH11231
  • Grant Number: NSF:DMR-0405472
  • Office of Scientific & Technical Information Report Number: 885229
  • Archival Resource Key: ark:/67531/metadc892000

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • January 28, 2005

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  • Sept. 23, 2016, 2:42 p.m.

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  • Dec. 16, 2016, 1:15 p.m.

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Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z. et al. Stable, free-standing Ge nanocrystals, article, January 28, 2005; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc892000/: accessed October 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.