Polycrystalline Thin Film Device Degradation Studies

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Oxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 deg C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.

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5 p.

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Albin, D. S.; McMahon, T. J.; Pankow, J. W.; Noufi, R.; Demtsu, S. H. & Davies, A. November 1, 2005.

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Oxygen during vapor CdCl2 (VCC) treatments significantly reduced resistive shunts observed in CdS/CdTe polycrystalline devices using thinner CdS layers during 100 deg C, open-circuit, 1-sun accelerated stress testing. Cu oxidation resulting from the reduction of various trace oxides present in as-grown and VCC treated films is the proposed mechanism by which Cu diffusion, and subsequent shunts are controlled. Graphite paste layers between metallization and CdTe behave like diffusion barriers and similarly benefit device stability. Ni-based contacts form a protective Ni2Te3 intermetallic layer that reduces metal diffusion but degrades performance through increased series resistance.

Physical Description

5 p.

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  • Related Information: Presented at the 2005 DOE Solar Energy Technologies Program Review Meeting held November 7-10, 2005 in Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-1020060-2245; NREL/CD-520-38577)

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  • Report No.: NREL/CP-520-39003
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 882806
  • Archival Resource Key: ark:/67531/metadc891607

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • November 1, 2005

Added to The UNT Digital Library

  • Sept. 23, 2016, 2:42 p.m.

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  • April 6, 2017, 12:45 p.m.

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Albin, D. S.; McMahon, T. J.; Pankow, J. W.; Noufi, R.; Demtsu, S. H. & Davies, A. Polycrystalline Thin Film Device Degradation Studies, article, November 1, 2005; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc891607/: accessed April 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.