6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths

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Semi-insulating silicon carbide (SiC) is an attractive material for application as high voltage, photoconductive semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity and high thermal conductivity. The critical field strength of 300 MV/m for 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications. To realize the benefits of the high bulk electric field strength of SiC and diffuse switch current, carriers must be excited throughout the bulk of the photo switch. Photoconducting switches with opposing electrodes were fabricated on ''a'' plane, vanadium compensated, semiinsulating, 6H-SiC substrates. The PCSS ... continued below

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Sullivan, J S & Stanley, J R February 13, 2007.

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Semi-insulating silicon carbide (SiC) is an attractive material for application as high voltage, photoconductive semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity and high thermal conductivity. The critical field strength of 300 MV/m for 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications. To realize the benefits of the high bulk electric field strength of SiC and diffuse switch current, carriers must be excited throughout the bulk of the photo switch. Photoconducting switches with opposing electrodes were fabricated on ''a'' plane, vanadium compensated, semiinsulating, 6H-SiC substrates. The PCSS devices were switched by optically exciting deep extrinsic levels lying within the 6H-SiC bandgap. The SiC photoswitches were tested up to a bias voltage of 11000 V with a corresponding peak current of 150 A. The 6H-SiC substrates withstood average electric fields up to 27 MV/m. Minimum PCCS dynamic resistances of 2 and 10 {Omega} were obtained with 13 mJ optical pulses at 532 and 1064 nm wavelengths, respectively.

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PDF-file: 8 pages; size: 1.4 Mbytes

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  • Journal Name: IEEE Transactions on Dielectrics and Electrical Insulation, vol. 14, no. 4, August 1, 2007, NA; Journal Volume: 14; Journal Issue: 4

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  • Report No.: UCRL-JRNL-228423
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 908902
  • Archival Resource Key: ark:/67531/metadc891292

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • February 13, 2007

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  • Sept. 22, 2016, 2:13 a.m.

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  • Nov. 22, 2016, 2:08 p.m.

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Sullivan, J S & Stanley, J R. 6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths, article, February 13, 2007; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc891292/: accessed August 18, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.