Gate Drive For High Speed, High Power IGBTs

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Description

A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3{micro}S with a rate of current rise of more than 10000A/{micro}S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips ... continued below

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4 pages

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Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C. & /SLAC June 18, 2007.

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Description

A new gate drive for high-voltage, high-power IGBTs has been developed for the SLAC NLC (Next Linear Collider) Solid State Induction Modulator. This paper describes the design and implementation of a driver that allows an IGBT module rated at 800A/3300V to switch up to 3000A at 2200V in 3{micro}S with a rate of current rise of more than 10000A/{micro}S, while still being short circuit protected. Issues regarding fast turn on, high de-saturation voltage detection, and low short circuit peak current will be presented. A novel approach is also used to counter the effect of unequal current sharing between parallel chips inside most high-power IGBT modules. It effectively reduces the collector-emitter peak current, and thus protects the IGBT from being destroyed during soft short circuit conditions at high di/dt.

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4 pages

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  • Presented at 28th International Conference on Plasma Science (ICOPS 2001) and 13th International Pulsed Power Conference (IPPC 2001), Las Vegas, Nevada, 17-22 Jun 2001

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  • Report No.: SLAC-PUB-12591
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 908994
  • Archival Resource Key: ark:/67531/metadc891157

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • June 18, 2007

Added to The UNT Digital Library

  • Sept. 22, 2016, 2:13 a.m.

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  • Nov. 28, 2016, 6:24 p.m.

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Nguyen, M.N.; Cassel, R.L.; de Lamare, J.E.; Pappas, G.C. & /SLAC. Gate Drive For High Speed, High Power IGBTs, article, June 18, 2007; [Menlo Park, California]. (digital.library.unt.edu/ark:/67531/metadc891157/: accessed August 20, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.