Mechanisms for Fatigue of Micron-Scale Silicon StructuralFilms

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Although bulk silicon is not susceptible to fatigue,micron-scale silicon is. Several mechanisms have been proposed to explainthis surprising behavior although the issue remains contentious. Here wedescribe published fatigue results for micron-scale thin siliconfilms andfind that in general they display similar trends, in that lower cyclicstresses result in larger number of cycles to failure in stress-lifetimedata. We further show that one of two classes of mechanisms is invariablyproposed to explain the phenomenon. The first class attributes fatigue toa surface effect caused by subcritical (stable) cracking in thesilicon-oxide layer, e.g., reaction-layer fatigue; the second classproposes that subcritical cracking in the silicon itself ... continued below

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Alsem, Daan Hein; Pierron, Olivier N.; Stach, Eric A.; Muhlstein,Christopher L. & Ritchie, Robert O. November 3, 2006.

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Although bulk silicon is not susceptible to fatigue,micron-scale silicon is. Several mechanisms have been proposed to explainthis surprising behavior although the issue remains contentious. Here wedescribe published fatigue results for micron-scale thin siliconfilms andfind that in general they display similar trends, in that lower cyclicstresses result in larger number of cycles to failure in stress-lifetimedata. We further show that one of two classes of mechanisms is invariablyproposed to explain the phenomenon. The first class attributes fatigue toa surface effect caused by subcritical (stable) cracking in thesilicon-oxide layer, e.g., reaction-layer fatigue; the second classproposes that subcritical cracking in the silicon itself is the cause offatigue in Si films. It is our contention that results to date fromsingle and poly crystalline silicon fatigue studies provide no convincingexperimentalevidence to support subcritical cracking in the silicon.Conversely, the reaction-layer mechanism is consistent with existingexperimental results, and moreover provides a rational explanation forthe marked difference in fatigue behavior of bulk and micron-scalesilicon.

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  • Journal Name: Advanced Engineering Materials; Journal Volume: 9; Journal Issue: 1-2; Related Information: Journal Publication Date: 2007

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  • Report No.: LBNL--61886
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 901525
  • Archival Resource Key: ark:/67531/metadc890098

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  • November 3, 2006

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  • Sept. 22, 2016, 2:13 a.m.

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  • Sept. 29, 2016, 3:10 p.m.

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Alsem, Daan Hein; Pierron, Olivier N.; Stach, Eric A.; Muhlstein,Christopher L. & Ritchie, Robert O. Mechanisms for Fatigue of Micron-Scale Silicon StructuralFilms, article, November 3, 2006; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc890098/: accessed June 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.