Model for l/f Flux Noise in SQUIDs and Qubits

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We propose a model for 1/f flux noise in superconducting devices (f is frequency). The noise is generated by the magnetic moments of electrons in defect states which they occupy for a wide distribution of times before escaping. A trapped electron occupies one of the two Kramers-degenerate ground states, between which the transition rate is negligible at low temperature. As a result, the magnetic moment orientation is locked. Simulations of the noise produced by a plausible density of randomly oriented defects yield 1/f noise magnitudes in good agreement with experiments.

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Koch, Roger H.; DiVincenzo, David P. & Clarke, John January 19, 2007.

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Description

We propose a model for 1/f flux noise in superconducting devices (f is frequency). The noise is generated by the magnetic moments of electrons in defect states which they occupy for a wide distribution of times before escaping. A trapped electron occupies one of the two Kramers-degenerate ground states, between which the transition rate is negligible at low temperature. As a result, the magnetic moment orientation is locked. Simulations of the noise produced by a plausible density of randomly oriented defects yield 1/f noise magnitudes in good agreement with experiments.

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  • Journal Name: Physical Review Letters; Journal Volume: 98; Journal Issue: 26; Related Information: Journal Publication Date: 06/2007

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  • Report No.: LBNL--62393
  • Grant Number: DE-AC02-05CH11231
  • DOI: 10.1103/PhysRevLett.98.267003 | External Link
  • Office of Scientific & Technical Information Report Number: 913162
  • Archival Resource Key: ark:/67531/metadc888515

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  • January 19, 2007

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  • Sept. 22, 2016, 2:13 a.m.

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Koch, Roger H.; DiVincenzo, David P. & Clarke, John. Model for l/f Flux Noise in SQUIDs and Qubits, article, January 19, 2007; United States. (digital.library.unt.edu/ark:/67531/metadc888515/: accessed September 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.