Radiation Damage Mechanisms for Luminescence in Eu-doped GaN

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Thin films of Eu-doped GaN are irradiated with 500 keV He{sup +} ions to understand radiation damage mechanisms and to quantify luminescence efficiency. Ion beam induced luminescence was monitored spectroscopically as function of fluence. Behavior observed is consistent with simultaneous creation of non-radiative defects and destruction of luminescent centers associated with the 4f-4f core-level transition in Eu{sup 3+}. This model contrasts with a previous description which takes into account only non-radiative defect generation in GaN:Eu. Based on light from a BaF{sub 2} scintillator standard, the luminescent energy generation efficiency of GaN:Eu films doped to {approx}3 x 10{sup 18} cm{sup -3} ... continued below

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Tringe, J W; Castelaz, J M; Felter, T E; Wetzel, C; Talley, C E; Morse, J D et al. November 1, 2005.

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Thin films of Eu-doped GaN are irradiated with 500 keV He{sup +} ions to understand radiation damage mechanisms and to quantify luminescence efficiency. Ion beam induced luminescence was monitored spectroscopically as function of fluence. Behavior observed is consistent with simultaneous creation of non-radiative defects and destruction of luminescent centers associated with the 4f-4f core-level transition in Eu{sup 3+}. This model contrasts with a previous description which takes into account only non-radiative defect generation in GaN:Eu. Based on light from a BaF{sub 2} scintillator standard, the luminescent energy generation efficiency of GaN:Eu films doped to {approx}3 x 10{sup 18} cm{sup -3} Eu is estimated to be {approx}0.1%.

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PDF-file: 16 pages; size: 0.2 Mbytes

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  • Journal Name: Journal of Applied Physics, vol. 101, no. 054902 , March 1, 2007, pp. 054902-1 to 054902-3; Journal Volume: 101; Journal Issue: 054902

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  • Report No.: UCRL-JRNL-216865
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 907874
  • Archival Resource Key: ark:/67531/metadc887928

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  • November 1, 2005

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  • Sept. 22, 2016, 2:13 a.m.

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  • Dec. 6, 2016, 6:09 p.m.

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Tringe, J W; Castelaz, J M; Felter, T E; Wetzel, C; Talley, C E; Morse, J D et al. Radiation Damage Mechanisms for Luminescence in Eu-doped GaN, article, November 1, 2005; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc887928/: accessed December 16, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.