III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report.

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The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the ... continued below

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31 p.

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Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick et al. December 1, 2003.

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Description

The goal of this LDRD was to investigate III-antimonide/nitride based materials for unique semiconductor properties and applications. Previous to this study, lack of basic information concerning these alloys restricted their use in semiconductor devices. Long wavelength emission on GaAs substrates is of critical importance to telecommunication applications for cost reduction and integration into microsystems. Currently InGaAsN, on a GaAs substrate, is being commercially pursued for the important 1.3 micrometer dispersion minima of silica-glass optical fiber; due, in large part, to previous research at Sandia National Laboratories. However, InGaAsN has not shown great promise for 1.55 micrometer emission which is the low-loss window of single mode optical fiber used in transatlantic fiber. Other important applications for the antimonide/nitride based materials include the base junction of an HBT to reduce the operating voltage which is important for wireless communication links, and for improving the efficiency of a multijunction solar cell. We have undertaken the first comprehensive theoretical, experimental and device study of this material with promising results. Theoretical modeling has identified GaAsSbN to be a similar or potentially superior candidate to InGaAsN for long wavelength emission on GaAs. We have confirmed these predictions by producing emission out to 1.66 micrometers and have achieved edge emitting and VCSEL electroluminescence at 1.3 micrometers. We have also done the first study of the transport properties of this material including mobility, electron/hole mass, and exciton reduced mass. This study has increased the understanding of the III-antimonide/nitride materials enough to warrant consideration for all of the target device applications.

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31 p.

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  • Report No.: SAND2003-4287
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/918384 | External Link
  • Office of Scientific & Technical Information Report Number: 918384
  • Archival Resource Key: ark:/67531/metadc886727

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  • December 1, 2003

Added to The UNT Digital Library

  • Sept. 22, 2016, 2:13 a.m.

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  • Nov. 29, 2016, 2:10 p.m.

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Kurtz, Steven Ross; Hargett, Terry W.; Serkland, Darwin Keith; Waldrip, Karen Elizabeth; Modine, Normand Arthur; Klem, John Frederick et al. III-antimonide/nitride based semiconductors for optoelectronic materials and device studies : LDRD 26518 final report., report, December 1, 2003; United States. (digital.library.unt.edu/ark:/67531/metadc886727/: accessed October 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.