Thermal conductivity measurements of Summit polycrystalline silicon.

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Description

A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these ... continued below

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48 p.

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Clemens, Rebecca; Kuppers, Jaron D. & Phinney, Leslie Mary November 1, 2006.

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Description

A capability for measuring the thermal conductivity of microelectromechanical systems (MEMS) materials using a steady state resistance technique was developed and used to measure the thermal conductivities of SUMMiT{trademark} V layers. Thermal conductivities were measured over two temperature ranges: 100K to 350K and 293K to 575K in order to generate two data sets. The steady state resistance technique uses surface micromachined bridge structures fabricated using the standard SUMMiT fabrication process. Electrical resistance and resistivity data are reported for poly1-poly2 laminate, poly2, poly3, and poly4 polysilicon structural layers in the SUMMiT process from 83K to 575K. Thermal conductivity measurements for these polysilicon layers demonstrate for the first time that the thermal conductivity is a function of the particular SUMMiT layer. Also, the poly2 layer has a different variation in thermal conductivity as the temperature is decreased than the poly1-poly2 laminate, poly3, and poly4 layers. As the temperature increases above room temperature, the difference in thermal conductivity between the layers decreases.

Physical Description

48 p.

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  • Report No.: SAND2006-7112
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/897917 | External Link
  • Office of Scientific & Technical Information Report Number: 897917
  • Archival Resource Key: ark:/67531/metadc886613

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  • November 1, 2006

Added to The UNT Digital Library

  • Sept. 22, 2016, 2:13 a.m.

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  • Dec. 7, 2016, 11:05 p.m.

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Clemens, Rebecca; Kuppers, Jaron D. & Phinney, Leslie Mary. Thermal conductivity measurements of Summit polycrystalline silicon., report, November 1, 2006; United States. (digital.library.unt.edu/ark:/67531/metadc886613/: accessed September 26, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.