HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition

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The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopy ... continued below

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25 pages

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Chen, P. T.; Sun, Y.; Kim, E.; McIntyre, P. C.; Tsai, W.; Garner, M. et al. September 28, 2007.

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The interface between hafnium oxide grown by atomic layer deposition and (100) GaAs treated with HCl cleaning and (NH{sub 4}){sub 2}S passivation has been characterized. Synchrotron radiation photoemission core level spectra indicated successful removal of the native oxides and formation of passivating sulfides on the GaAs surface. Layer-by-layer removal of the hafnia film revealed a small amount of As{sub 2}O{sub 3} formed at the interface during the dielectric deposition. Traces of arsenic and sulfur out-diffusion into the hafnia film were observed after a 450 C post-deposition anneal, and may be the origins for the electrically active defects. Transmission electron microscopy cross section images showed thicker HfO{sub 2} films for a given precursor exposure on S-treated GaAs versus the non-treated sample. In addition, the valence-band and the conduction-band offsets at the HfO{sub 2}/GaAs interface were deduced to be 3.18 eV and a range of 0.87-0.97 eV, respectively. It appears that HCl+(NH{sub 4})2{sub S} treatments provide a superior chemical passivation for GaAs and initial surface for ALD deposition.

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25 pages

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  • Journal Name: Journal of Applied Physics

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  • Report No.: SLAC-PUB-12802
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 917270
  • Archival Resource Key: ark:/67531/metadc885101

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Office of Scientific & Technical Information Technical Reports

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  • September 28, 2007

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  • Sept. 22, 2016, 2:13 a.m.

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  • July 26, 2017, 12:01 p.m.

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Chen, P. T.; Sun, Y.; Kim, E.; McIntyre, P. C.; Tsai, W.; Garner, M. et al. HfO2 Gate Dielectric on (NH4)2S Passivated (100) GaAs Grown by Atomic Layer Deposition, article, September 28, 2007; [Menlo Park, California]. (digital.library.unt.edu/ark:/67531/metadc885101/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.