Dopants and Defects in InN and InGaN Alloys

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We have performed systematic studies of the effects of high-energy particle irradiation on the properties of InGaN alloys. In agreement with the amphoteric defect model, irradiation of InN produces donor-like defects. The electron concentration increases with increasing radiation dose and saturates at 4 x 10{sup 20} cm{sup -3} at very high doses. We find that the increase of the electron concentration causes a large blue-shift of the absorption edge, which is well-explained by the Burstein-Moss effect. The maximum electron concentration decreases with increasing Ga fraction in irradiated In{sub 1-x}Ga{sub x}N alloys as the conduction band edge approaches the Fermi level ... continued below

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Walukiewicz, W.; Jones, R.E.; Li, S.X.; Yu, K.M.; Ager III, J.W.; Haller, E.E. et al. April 1, 2005.

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We have performed systematic studies of the effects of high-energy particle irradiation on the properties of InGaN alloys. In agreement with the amphoteric defect model, irradiation of InN produces donor-like defects. The electron concentration increases with increasing radiation dose and saturates at 4 x 10{sup 20} cm{sup -3} at very high doses. We find that the increase of the electron concentration causes a large blue-shift of the absorption edge, which is well-explained by the Burstein-Moss effect. The maximum electron concentration decreases with increasing Ga fraction in irradiated In{sub 1-x}Ga{sub x}N alloys as the conduction band edge approaches the Fermi level stabilization energy (E{sub FS}). For x > 0.66 the conduction band edge moves above E{sub FS} and the irradiation of n-type films produces acceptor-like defects, resulting in a reduced free electron concentration. An analysis of the concentration dependence of the electron mobility in InN indicates that the dominant defects in irradiated InN are triply-charged donors. Finally, we show that InN films doped with Mg acceptors behave like undoped films above a threshold radiation dose.

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  • AFOSR Indium Nitride Workshop 2, Kona, Hawaii,January 9-13, 2005

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  • Report No.: LBNL--59187
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 889899
  • Archival Resource Key: ark:/67531/metadc884911

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  • April 1, 2005

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  • Sept. 21, 2016, 2:29 a.m.

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  • Sept. 30, 2016, 2:23 p.m.

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Walukiewicz, W.; Jones, R.E.; Li, S.X.; Yu, K.M.; Ager III, J.W.; Haller, E.E. et al. Dopants and Defects in InN and InGaN Alloys, article, April 1, 2005; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc884911/: accessed August 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.