In/Si(111): Self-assembled one and two-dimensional electrongases

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We present angle-resolved photoemission measurements forultrathin In films on Si(111). Depending on the coverage, this systemself-organizes into a metallic monolayer with either 4x1 or sqrt7 x sqrt3symmetry relative to the substrate. Electronically, they behave likeideal one- and two-dimensional electron gases (1DEG and 2DEG),respectively. The 4x1 system has atomic chains of In whose energy bandsdisperse only parallel to the chains, while for the sqrt7 x sqrt3 system,the dominant reciprocal space features (in both diffraction andbandstructure) resemble a pseudo-square lattice with only weakersecondary features relating to the sqrt7 x sqrt3 periodicity. In bothmaterials the electrons show coupling to the structure. The 1DEG ... continued below

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Rotenberg, Eli; Yeom, H.W.; Takeda, S.; Matsuda, I.; Horikoshi,K.; Schaefer, J. et al. January 22, 2001.

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We present angle-resolved photoemission measurements forultrathin In films on Si(111). Depending on the coverage, this systemself-organizes into a metallic monolayer with either 4x1 or sqrt7 x sqrt3symmetry relative to the substrate. Electronically, they behave likeideal one- and two-dimensional electron gases (1DEG and 2DEG),respectively. The 4x1 system has atomic chains of In whose energy bandsdisperse only parallel to the chains, while for the sqrt7 x sqrt3 system,the dominant reciprocal space features (in both diffraction andbandstructure) resemble a pseudo-square lattice with only weakersecondary features relating to the sqrt7 x sqrt3 periodicity. In bothmaterials the electrons show coupling to the structure. The 1DEG couplesstrongly to phonons of momentum 2kF, leading to an 8x"2" Peierls-likeinsulating ground state. The 2DEG appears to be partially stabilized byelectron gap formation at the sqrt 7 x sqrt3 zone boundary.

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  • Materials Research Society, Boston, MA, Nov27-Dec 1 2000

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  • Report No.: LBNL--48235
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 903360
  • Archival Resource Key: ark:/67531/metadc883814

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  • January 22, 2001

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  • Sept. 22, 2016, 2:13 a.m.

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  • Sept. 30, 2016, 3:44 p.m.

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Rotenberg, Eli; Yeom, H.W.; Takeda, S.; Matsuda, I.; Horikoshi,K.; Schaefer, J. et al. In/Si(111): Self-assembled one and two-dimensional electrongases, article, January 22, 2001; (digital.library.unt.edu/ark:/67531/metadc883814/: accessed August 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.