Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications

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We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the first year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The first year activities were focused on the installation, set-up, and use of advanced equipment for the metalorganic chemical vapor deposition growth of III-nitride films and the characterization of these materials (Task 1) and the design, fabrication, testing of nitride LEDs (Task 4). As a progress highlight, we obtained improved quality of {approx} 2 {micro}m-thick GaN layers (as ... continued below

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Dupuis, Russell D. September 30, 2004.

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Description

We report research activities and technical progress on the development of high-efficiency long wavelength ({lambda} {approx} 540nm) green light emitting diodes which covers the first year of the three-year program ''Novel approaches to high-efficiency III-V nitride heterostructure emitters for next-generation lighting applications''. The first year activities were focused on the installation, set-up, and use of advanced equipment for the metalorganic chemical vapor deposition growth of III-nitride films and the characterization of these materials (Task 1) and the design, fabrication, testing of nitride LEDs (Task 4). As a progress highlight, we obtained improved quality of {approx} 2 {micro}m-thick GaN layers (as measured by the full width at half maximum of the asymmetric (102) X-ray diffraction peak of less than 350 arc-s) and higher p-GaN:Mg doping level (free hole carrier higher than 1E18 cm{sup -3}). Also in this year, we have developed the growth of InGaN/GaN active layers for long-wavelength green light emitting diodes, specifically, for emission at {lambda} {approx} 540nm. The effect of the Column III precursor (for Ga) and the post-growth thermal annealing effect were also studied. Our LED device fabrication process was developed and initially optimized, especially for low-resistance ohmic contacts for p-GaN:Mg layers, and blue-green light emitting diode structures were processed and characterized.

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  • Report No.: None
  • Grant Number: FC26-03NT41946
  • DOI: 10.2172/892439 | External Link
  • Office of Scientific & Technical Information Report Number: 892439
  • Archival Resource Key: ark:/67531/metadc883439

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • September 30, 2004

Added to The UNT Digital Library

  • Sept. 21, 2016, 2:29 a.m.

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  • Dec. 6, 2016, 2:16 p.m.

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Dupuis, Russell D. Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications, report, September 30, 2004; United States. (digital.library.unt.edu/ark:/67531/metadc883439/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.