Improved InGaN epitaxy yield by precise temperature measurement :yearly report 1.

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This Report summarizes the first year progress (October 1, 2004 to September 30, 2005) made under a NETL funded project entitled ''Improved InGaN Epitaxy Yield by Precise Temperature Measurement''. This Project addresses the production of efficient green LEDs, which are currently the least efficient of the primary colors. The Project Goals are to advance IR and UV-violet pyrometry to include real time corrections for surface emissivity on multiwafer MOCVD reactors. Increasing wafer yield would dramatically reduce high brightness LED costs and accelerate the commercial manufacture of inexpensive white light LEDs with very high color quality. This work draws upon and ... continued below

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21 p.

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Koleske, Daniel David; Creighton, James Randall; Russell, Michael J. & Fischer, Arthur Joseph August 1, 2006.

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Description

This Report summarizes the first year progress (October 1, 2004 to September 30, 2005) made under a NETL funded project entitled ''Improved InGaN Epitaxy Yield by Precise Temperature Measurement''. This Project addresses the production of efficient green LEDs, which are currently the least efficient of the primary colors. The Project Goals are to advance IR and UV-violet pyrometry to include real time corrections for surface emissivity on multiwafer MOCVD reactors. Increasing wafer yield would dramatically reduce high brightness LED costs and accelerate the commercial manufacture of inexpensive white light LEDs with very high color quality. This work draws upon and extends our previous research (funded by DOE) that developed emissivity correcting pyrometers (ECP) based on the high-temperature GaN opacity near 400 nm (the ultraviolet-violet range, or UVV), and the sapphire opacity in the mid-IR (MIR) near 7.5 microns.

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21 p.

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  • Report No.: SAND2006-4359
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/891367 | External Link
  • Office of Scientific & Technical Information Report Number: 891367
  • Archival Resource Key: ark:/67531/metadc883261

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • August 1, 2006

Added to The UNT Digital Library

  • Sept. 21, 2016, 2:29 a.m.

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  • Nov. 29, 2016, 2:26 p.m.

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Koleske, Daniel David; Creighton, James Randall; Russell, Michael J. & Fischer, Arthur Joseph. Improved InGaN epitaxy yield by precise temperature measurement :yearly report 1., report, August 1, 2006; United States. (digital.library.unt.edu/ark:/67531/metadc883261/: accessed September 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.