Surface Passivation of Germanium Nanowires Page: 2 of 14
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One-dimensional structures such as nanotubes and nanowires are being actively
investigated for various applications in nanotechnology, including nanoelectronics.
Silicon and Germanium based semiconductor nanowires are among the more promising
of these nanostructures for electronic and other applications because of their
compatibility with existing Si CMOS integrated circuit technology. Though, historically,
Si replaced Ge in microelectronics largely because of the superior structural and electrical
characteristics of the Si/SiO2 interface, recent work on surface passivation of bulk Ge
crystals and gate dielectric deposition on those surfaces suggests that Ge may again
become an important material for high performance transistors 12. In the emerging
technology of 3 dimensional (3-D) nanoelectronics, germanium nanowire (GeNW)
transistors are very promising components for active device layers above a single crystal
silicon substrate because of a) the relatively low growth temperature, well below 4000 C,
of these nanowires by catalyzed chemical vapor deposition3 and b) the high intrinsic hole
and electron mobilities of Ge compared to Si 4. The potential of the GeNWs as building
blocks for molecular-scale 3-D integrated circuits has been demonstrated by successful
fabrication of field-effect transistors (FETs) based on p-type GeNWs with high dielectric
constant (high-k) films as gate insulators.
Passivation of the surface of GeNWs before deposition of the dielectric layer is
one of the key steps to fabricate a working device. Detailed investigation of the surface
chemistry of as-grown and air-exposed GeNWs and exploration of various chemical
passivation pathways is valuable for understanding and controlling the behavior of
devices made from these GeNWs.2
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Adhikari, Hemant; Sun, Shiyu; Pianetta, Piero; Chidsey, Chirstopher E.D.; McIntyre, Paul C. & /SLAC, SSRL. Surface Passivation of Germanium Nanowires, report, May 13, 2005; [Menlo Park, California]. (https://digital.library.unt.edu/ark:/67531/metadc882601/m1/2/: accessed April 19, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.