Radiative Characteristics of On-Chip Terahertz (THz) Structures Metadata

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Title

  • Main Title Radiative Characteristics of On-Chip Terahertz (THz) Structures

Creator

  • Author: Hussein, Yasser A.
    Creator Type: Personal
  • Author: Spencer, James E.
    Creator Type: Personal
    Creator Info: /SLAC

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization

Publisher

  • Name: Stanford Linear Accelerator Center
    Place of Publication: [Menlo Park, California]
    Additional Info: SLAC

Date

  • Creation: 2005-06-07

Language

  • English

Description

  • Content Description: Previously, we explored possibilities for producing narrow-band THz radiation using either free or bound electrons (solid state) in micro-undulatory configurations [1] because integrated circuit technology appeared well matched to this region extending from about 300 GHz to 30 THz. This range [2]-[3] has largely been neglected until recently because it runs from the limit of WR-3 waveguide around 300 GHz up to CO{sub 2} lasers where the laser regime becomes dominant. There are mainly two approaches for generating THz radiation, i.e. through free or bound electron (BE) implementations. In this paper, emphasis is on producing this radiation using bound electrons via IC technology but in close analogy to free electron lasers (FELs) that are comparatively immense, expensive, need high power and have low efficiencies [4].
  • Physical Description: 4 pages

Subject

  • Keyword: Accelerators,Accsys, Accphy, Astro, Hepex, Inst, Hepth
  • Keyword: Electrons Accelerators,Accsys, Accphy, Astro, Hepex, Inst, Hepth
  • Keyword: Waveguides
  • Keyword: Laser Radiation
  • STI Subject Categories: 42 Engineering
  • Keyword: Free Electron Lasers
  • Keyword: Integrated Circuits
  • Keyword: Thz Range

Source

  • Conference: Contributed to 2005 International Microwave Symposium, , 6/12/2005-6/17/2005

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: SLAC-PUB-10904
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 890460
  • Archival Resource Key: ark:/67531/metadc881857

Note

  • Display Note: http://www.slac.stanford.edu/cgi-wrap/pubpage?slac-pub-10904.html
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