Electron Beam-induced Light Emission and Transport in GaN Nanowires

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We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined. Optical interconnects are powerful components presently applied for high bandwidth communications among high-performance processors. Future circuits based on nanometer-scale components could similarly benefit from optical information transfer among processing blocks. Strong light ... continued below

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Tringe, J W; MoberlyChan, W J; Stevens, C G; Davydov, A V & Motayed, A May 10, 2006.

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We report observations of electron beam-induced light from GaN nanowires grown by chemical vapor deposition. GaN nanowires were modified in-situ with deposited opaque platinum coatings to estimate the extent to which light is channeled to the ends of nanowires. Some evidence of light channeling was found, but wire microstructure and defects play an important role in light scattering and transport, limiting the extent to which light is confined. Optical interconnects are powerful components presently applied for high bandwidth communications among high-performance processors. Future circuits based on nanometer-scale components could similarly benefit from optical information transfer among processing blocks. Strong light channeling (and even lasing) has been observed in GaN nanowires, suggesting that these structures could be useful building blocks in a future networked electro-optical processor. However, the extent to which defects and microstructure control optical performance in nanowire waveguides has not been measured. In this study, we use electron microscopy and in-situ modification of individual nanowires to begin to correlate wire structure with light transport efficiency through GaN nanowires tens of microns long.

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  • Presented at: 1st International Conference on Nano-Networks, Lausanne, Switzerland, Sep 14 - Sep 16, 2006

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  • Report No.: UCRL-CONF-221583
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 896015
  • Archival Resource Key: ark:/67531/metadc881784

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Office of Scientific & Technical Information Technical Reports

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  • May 10, 2006

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  • Sept. 22, 2016, 2:13 a.m.

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  • Nov. 23, 2016, 6:04 p.m.

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Tringe, J W; MoberlyChan, W J; Stevens, C G; Davydov, A V & Motayed, A. Electron Beam-induced Light Emission and Transport in GaN Nanowires, article, May 10, 2006; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc881784/: accessed June 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.