HIGH ELECTRIC FIELD, HIGH CURRENT PACKAGING OF SIC PHOTO-SWITCHES

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This paper discusses the methods and materials being developed to package semi-insulating Silicon Carbide (SiC) in a high electric field, high current package while providing entrance for photo-conductive optical energy necessary for closure. The switch requirements and design goals are presented. The switch material package combination must enable a relatively large current and control the current density at the contacts and through the material while supporting a very high electric blocking field. The material parameters and methods of controlling the current density and the peak electric field in the region where the electrode separated from the SiC material are discussed. ... continued below

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5 p. (0.2 MB)

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Nunnally, W; Sanders, D; Sampayan, S & Caporaso, G May 26, 2005.

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Description

This paper discusses the methods and materials being developed to package semi-insulating Silicon Carbide (SiC) in a high electric field, high current package while providing entrance for photo-conductive optical energy necessary for closure. The switch requirements and design goals are presented. The switch material package combination must enable a relatively large current and control the current density at the contacts and through the material while supporting a very high electric blocking field. The material parameters and methods of controlling the current density and the peak electric field in the region where the electrode separated from the SiC material are discussed. The mask design and Ohmic contact formation processes at the SiC--metal electrode interface as well as the methods used to bond the semiconductor contact to the electrode are discussed. In addition, images of package failures are presented and the direction being pursued for improving package performance is presented.

Physical Description

5 p. (0.2 MB)

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PDF-file: 5 pages; size: 0.2 Mbytes

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  • Presented at: IEEE International Pulsed Power Conference, Monterey, CA, United States, Jun 13 - Jun 17, 2005

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  • Report No.: UCRL-CONF-212630
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 877750
  • Archival Resource Key: ark:/67531/metadc880704

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 26, 2005

Added to The UNT Digital Library

  • Sept. 21, 2016, 2:29 a.m.

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  • April 13, 2017, 6:12 p.m.

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Nunnally, W; Sanders, D; Sampayan, S & Caporaso, G. HIGH ELECTRIC FIELD, HIGH CURRENT PACKAGING OF SIC PHOTO-SWITCHES, article, May 26, 2005; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc880704/: accessed December 10, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.