Effect of Native Defects on Optical Properties of InxGa1-xNAlloys

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The energy position of the optical absorption edge and the free carrier populations in In{sub x}Ga{sub 1-x}N ternary alloys can be controlled using high energy {sup 4}He{sup +} irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in In{sub x}Ga{sub 1-x}N ... continued below

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Li, S.X.; Haller, E.E.; Yu, K.M.; Walukiewicz, W.; Ager III,J.W.; Wu, J. et al. May 9, 2005.

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The energy position of the optical absorption edge and the free carrier populations in In{sub x}Ga{sub 1-x}N ternary alloys can be controlled using high energy {sup 4}He{sup +} irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in In{sub x}Ga{sub 1-x}N are in excellent agreement with the predictions of the amphoteric defect model.

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  • Journal Name: Applied Physics Letters; Journal Volume: 87; Journal Issue: 16; Related Information: Journal Publication Date: 10/17/2005

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  • Report No.: LBNL--57562
  • Grant Number: DE-AC02-05CH11231
  • DOI: 10.1063/1.2108118 | External Link
  • Office of Scientific & Technical Information Report Number: 877627
  • Archival Resource Key: ark:/67531/metadc880203

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  • May 9, 2005

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  • Sept. 21, 2016, 2:29 a.m.

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  • Sept. 29, 2016, 2:27 p.m.

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Li, S.X.; Haller, E.E.; Yu, K.M.; Walukiewicz, W.; Ager III,J.W.; Wu, J. et al. Effect of Native Defects on Optical Properties of InxGa1-xNAlloys, article, May 9, 2005; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc880203/: accessed October 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.