Efficient Modeling of PIN Diode Switches Employing Time-Domain Electromagnetic-Physics-Based Simulators

PDF Version Also Available for Download.

Description

This paper presents an efficient full-wave time-domain simulator for accurate modeling of PIN diode switches. An equivalent circuit of the PIN diode is extracted under different bias conditions using a drift-diffusion physical model. Net recombination is modeled using a Shockley-Read-Hall process, while generation is assumed to be dominated by impact ionization. The device physics is coupled to Maxwell's equations using extended-FDTD formulism. A complete set of results is presented for the on and off states of the PIN switch. The results are validated through comparison with independent measurements, where good agreement is observed. Using this modeling approach, it is demonstrated ... continued below

Physical Description

4 pages

Creation Information

Hussein, Y.A.; Spencer, J.E.; /SLAC; El-Ghazaly, S.M.; U., /Tennessee; Goodnick, S.M. et al. September 20, 2005.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

This paper presents an efficient full-wave time-domain simulator for accurate modeling of PIN diode switches. An equivalent circuit of the PIN diode is extracted under different bias conditions using a drift-diffusion physical model. Net recombination is modeled using a Shockley-Read-Hall process, while generation is assumed to be dominated by impact ionization. The device physics is coupled to Maxwell's equations using extended-FDTD formulism. A complete set of results is presented for the on and off states of the PIN switch. The results are validated through comparison with independent measurements, where good agreement is observed. Using this modeling approach, it is demonstrated that one can efficiently optimize PIN switches for better performance.

Physical Description

4 pages

Source

  • Prepared for IEEE MTT-S 2005 International Microwave Symposium: The Flagship of Microwaves, Long Beach, California, 12-17 Jun 2005

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: SLAC-PUB-11281
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 878406
  • Archival Resource Key: ark:/67531/metadc879203

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • September 20, 2005

Added to The UNT Digital Library

  • Sept. 21, 2016, 2:29 a.m.

Description Last Updated

  • Nov. 23, 2016, 5:35 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Hussein, Y.A.; Spencer, J.E.; /SLAC; El-Ghazaly, S.M.; U., /Tennessee; Goodnick, S.M. et al. Efficient Modeling of PIN Diode Switches Employing Time-Domain Electromagnetic-Physics-Based Simulators, article, September 20, 2005; [Menlo Park, California]. (digital.library.unt.edu/ark:/67531/metadc879203/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.