Nitrogen Doping and Thermal Stability in HfSiOxNy Studied by Photoemission and X-ray Absorption Spectroscopy

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We have investigated nitrogen-doping effects into HfSiO{sub x} films on Si and their thermal stability using synchrotron-radiation photoemission and x-ray absorption spectroscopy. N 1s core-level photoemission and N K-edge absorption spectra have revealed that chemical-bonding states of N-Si{sub 3-x}O{sub x} and interstitial N{sub 2}-gas-like features are clearly observed in as-grown HfSiO{sub x}N{sub y} film and they decrease upon ultrahigh vacuum (UHV) annealing due to a thermal instability, which can be related to the device performance. Annealing-temperature dependence in Hf 4f and Si 2p photoemission spectra suggests that the Hf-silicidation temperature is effectively increased by nitrogen doping into the HfSiO{sub x} ... continued below

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11 pages

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Toyoda, Satoshi; Okabayashi, Jun; Takahashi, Haruhiko; Oshima, Masaharu; U., /Tokyo; Lee, Dong-Ick et al. December 14, 2005.

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We have investigated nitrogen-doping effects into HfSiO{sub x} films on Si and their thermal stability using synchrotron-radiation photoemission and x-ray absorption spectroscopy. N 1s core-level photoemission and N K-edge absorption spectra have revealed that chemical-bonding states of N-Si{sub 3-x}O{sub x} and interstitial N{sub 2}-gas-like features are clearly observed in as-grown HfSiO{sub x}N{sub y} film and they decrease upon ultrahigh vacuum (UHV) annealing due to a thermal instability, which can be related to the device performance. Annealing-temperature dependence in Hf 4f and Si 2p photoemission spectra suggests that the Hf-silicidation temperature is effectively increased by nitrogen doping into the HfSiO{sub x} although the interfacial SiO{sub 2} layer is selectively reduced. No change in valence-band spectra upon UHV annealing suggests that crystallization of the HfSiO{sub x}N{sub y} films is also hindered by nitrogen doping into the HfSiO{sub x}.

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11 pages

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  • Journal Name: Applied Physics Letters

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  • Report No.: SLAC-PUB-11564
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 877490
  • Archival Resource Key: ark:/67531/metadc878988

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  • December 14, 2005

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  • Sept. 21, 2016, 2:29 a.m.

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  • Nov. 30, 2016, 1:06 p.m.

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Toyoda, Satoshi; Okabayashi, Jun; Takahashi, Haruhiko; Oshima, Masaharu; U., /Tokyo; Lee, Dong-Ick et al. Nitrogen Doping and Thermal Stability in HfSiOxNy Studied by Photoemission and X-ray Absorption Spectroscopy, article, December 14, 2005; [Menlo Park, California]. (digital.library.unt.edu/ark:/67531/metadc878988/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.