Simulation of neutron displacement damage in bipolar junction transistors using high-energy heavy ion beams.

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Electronic components such as bipolar junction transistors (BJTs) are damaged when they are exposed to radiation and, as a result, their performance can significantly degrade. In certain environments the radiation consists of short, high flux pulses of neutrons. Electronics components have traditionally been tested against short neutron pulses in pulsed nuclear reactors. These reactors are becoming less and less available; many of them were shut down permanently in the past few years. Therefore, new methods using radiation sources other than pulsed nuclear reactors needed to be developed. Neutrons affect semiconductors such as Si by causing atomic displacements of Si atoms. ... continued below

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39 p.

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Doyle, Barney Lee; Buller, Daniel L.; Hjalmarson, Harold Paul; Fleming, Robert M; Bielejec, Edward Salvador & Vizkelethy, Gyorgy December 1, 2006.

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Description

Electronic components such as bipolar junction transistors (BJTs) are damaged when they are exposed to radiation and, as a result, their performance can significantly degrade. In certain environments the radiation consists of short, high flux pulses of neutrons. Electronics components have traditionally been tested against short neutron pulses in pulsed nuclear reactors. These reactors are becoming less and less available; many of them were shut down permanently in the past few years. Therefore, new methods using radiation sources other than pulsed nuclear reactors needed to be developed. Neutrons affect semiconductors such as Si by causing atomic displacements of Si atoms. The recoiled Si atom creates a collision cascade which leads to displacements in Si. Since heavy ions create similar cascades in Si we can use them to create similar damage to what neutrons create. This LDRD successfully developed a new technique using easily available particle accelerators to provide an alternative to pulsed nuclear reactors to study the displacement damage and subsequent transient annealing that occurs in various transistor devices and potentially qualify them against radiation effects caused by pulsed neutrons.

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39 p.

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  • Report No.: SAND2006-7746
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/913228 | External Link
  • Office of Scientific & Technical Information Report Number: 913228
  • Archival Resource Key: ark:/67531/metadc878821

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  • December 1, 2006

Added to The UNT Digital Library

  • Sept. 22, 2016, 2:13 a.m.

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  • Dec. 7, 2016, 9:17 p.m.

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Doyle, Barney Lee; Buller, Daniel L.; Hjalmarson, Harold Paul; Fleming, Robert M; Bielejec, Edward Salvador & Vizkelethy, Gyorgy. Simulation of neutron displacement damage in bipolar junction transistors using high-energy heavy ion beams., report, December 1, 2006; United States. (digital.library.unt.edu/ark:/67531/metadc878821/: accessed November 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.