Comparison of ALINGAAS/GAAS Superlattice Photocathodes Having Low Conduction Band Offset Metadata

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Title

  • Main Title Comparison of ALINGAAS/GAAS Superlattice Photocathodes Having Low Conduction Band Offset

Creator

  • Author: Ioakeimidi, K,
    Creator Type: Personal
  • Author: Maruyama, T.
    Creator Type: Personal
  • Author: Clendenin, J.E.
    Creator Type: Personal
  • Author: Brachmann, A.
    Creator Type: Personal
  • Author: Garwin, E.L.
    Creator Type: Personal
  • Author: Kirby, R.E.
    Creator Type: Personal
  • Author: Prescott, C.Y.
    Creator Type: Personal
  • Author: Vasilyev, D.
    Creator Type: Personal
  • Author: /SLAC
    Creator Type: Personal
  • Author: Mamaev, Y.A.
    Creator Type: Personal
  • Author: Gerchikov, L.G.
    Creator Type: Personal
  • Author: Subashiev, A.V.
    Creator Type: Personal
  • Author: Yashin, Y.P.
    Creator Type: Personal
  • Author: Inst., /St. Petersburg Polytechnic
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization

Publisher

  • Name: Stanford Linear Accelerator Center
    Place of Publication: [Menlo Park, California]
    Additional Info: SLAC

Date

  • Creation: 2006-03-31

Language

  • English

Description

  • Content Description: The main advantage of superlattice (SL) structures as spin polarized electron emitters is the ability to provide a large splitting between the heavy hole (HH) and light hole (LH) valence bands (VB) over a large active thickness compared to single strained layers. Two important depolarization mechanisms in these structures are the scattering effects during the transit of the electrons in the active region and the depolarization that takes place in the band bending region (BBR) near the surface. In this paper, we systematically study the effects of the electron mobility and transit time by using an InAlGaAs/GaAs SL with a flat conduction band (CB). Initial results by the SPTU-SLAC collaboration using such structures grown by the Ioffe Institute showed polarization and quantum yield (QE) of 92% and 0.2% respectively. We report measurements using similar structures grown by SVT Associates. The results (polarization up to 90%) are also compared with simulations.
  • Physical Description: 5 pages

Subject

  • Keyword: General Physics,Phys
  • Keyword: Indium Arsenides
  • Keyword: Superlattices General Physics,Phys
  • STI Subject Categories: 36 Materials Science
  • Keyword: Electron Mobility
  • Keyword: Polarization
  • Keyword: Photocathodes
  • Keyword: Aluminium Arsenides
  • Keyword: Gallium Arsenides

Source

  • Conference: Presented at 11th International Workshop on Polarized Sources and Targets (PST05), Tokyo, Japan, 14-17 Nov 2005

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: SLAC-PUB-11793
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 878341
  • Archival Resource Key: ark:/67531/metadc876623

Note

  • Display Note: http://www.slac.stanford.edu/cgi-wrap/pubpage?slac-pub-11793.html