Comparison of ALINGAAS/GAAS Superlattice Photocathodes Having Low Conduction Band Offset Page: 1 of 5
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COMPARISON OF ALINGAAS/GAAS SUPERLATTICE
PHOTOCATHODES HAVING LOW CONDUCTION BAND
K. IOAKEIMIDI, T. MARUYAMA, J. E. CLENDENIN, A. BRACHMANN, E. L.
GARWIN, R. E. KIRBY, C. Y. PRESCOTT, D. VASILYEV
Stanford Linear Accelerator Center
Menlo Park, CA 94025, USA
Y. A. MAMAEV, L. G. GERCHIKOV, A.V. SUBASHIEV, Y. P. YASHIN
Saint-Petersburg State Polytechnic University, Politechnicheskaya 29, Saint-Petersburg,
Department of Physics, University of Wisconsin
Madison, WI 53706, USA
The main advantage of superlattice (SL) structures as spin polarized electron emitters is
the ability to provide a large splitting between the heavy hole (HH) and light hole (LH)
valence bands (VB) over a large active thickness compared to single strained layers. Two
important depolarization mechanisms in these structures are the scattering effects during
the transit of the electrons in the active region and the depolarization that takes place in
the band bending region (BBR) near the surface. In this paper, we systematically study
the effects of the electron mobility and transit time by using an InAlGaAs/GaAs SL with
a flat conduction band (CB). Initial results by the SPTU-SLAC collaboration using such
structures grown by the Ioffe Institute showed polarization and quantum yield (QE) of
92% and 0.2% respectively. We report measurements using similar structures grown by
SVT Associates. The results (polarization up to 90%) are also compared with simulations.
High polarization electron sources are an important part of the International
Linear Collider effort at SLAC. In previous work, polarization on the order of
90% was achieved with the GaAs/GaAsP SL , .
The main spin depolarization mechanisms in these structures are:
Work supported by Department of Energy contracts DE-AC02-76SF00515 (SLAC) and DE-AC02-
76ER00881 (UW), RFBR under grant 04-02-16038 and NATO under grant PST.CLG.979966
Presented at Polarized Sources and Targets, Tokyo, Japan 14-17 Nov. 2005
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Ioakeimidi, K,; Maruyama, T.; Clendenin, J.E.; Brachmann, A.; Garwin, E.L.; Kirby, R.E. et al. Comparison of ALINGAAS/GAAS Superlattice Photocathodes Having Low Conduction Band Offset, article, March 31, 2006; [Menlo Park, California]. (digital.library.unt.edu/ark:/67531/metadc876623/m1/1/: accessed August 14, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.