Diffusion of silicon in crystalline germanium

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We report the determination of the diffusion coefficient of Si in crystalline Ge over the temperature range of 550 to 900 C. A molecular beam epitaxy (MBE) grown buried Si layer in an epitaxial Ge layer on a crystalline Ge substrate was used as the source for the diffusion experiments. For samples annealed at temperatures above 700 C, a 50 nm thick SiO{sub 2} cap layer was deposited to prevent decomposition of the Ge surface. We found the temperature dependence of the diffusion coefficient to be described by a single activation energy (3.32 eV) and pre-factor (38 cm{sup 2}/s) over ... continued below

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Silvestri, H.H.; Bracht, H.; Hansen, J. Lundsgaard; Larsen, A.Nylandsted & Haller, E.E. June 6, 2005.

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We report the determination of the diffusion coefficient of Si in crystalline Ge over the temperature range of 550 to 900 C. A molecular beam epitaxy (MBE) grown buried Si layer in an epitaxial Ge layer on a crystalline Ge substrate was used as the source for the diffusion experiments. For samples annealed at temperatures above 700 C, a 50 nm thick SiO{sub 2} cap layer was deposited to prevent decomposition of the Ge surface. We found the temperature dependence of the diffusion coefficient to be described by a single activation energy (3.32 eV) and pre-factor (38 cm{sup 2}/s) over the entire temperature range studied. The diffusion of the isovalent Si in Ge is slower than Ge self-diffusion over the full temperature range and reveals an activation enthalpy which is higher than that of self-diffusion. This points to a reduced interaction potential between the Si atom and the native defect mediating the diffusion process. For Si, which is smaller in size than the Ge self-atom, a reduced interaction is expected for a Si-vacancy (Si-V{sub Ge}) pair. Therefore we conclude that Si diffuses in Ge via the vacancy mechanism.

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  • Journal Name: Semiconductor Science and Technology; Journal Volume: 21; Journal Issue: 6; Related Information: Journal Publication Date: 06/2006

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  • Report No.: LBNL--57673
  • Grant Number: DE-AC02-05CH11231
  • Grant Number: NSF:DMR-0405472
  • Office of Scientific & Technical Information Report Number: 891200
  • Archival Resource Key: ark:/67531/metadc875443

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • June 6, 2005

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  • Sept. 21, 2016, 2:29 a.m.

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  • Sept. 30, 2016, 2:21 p.m.

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Silvestri, H.H.; Bracht, H.; Hansen, J. Lundsgaard; Larsen, A.Nylandsted & Haller, E.E. Diffusion of silicon in crystalline germanium, article, June 6, 2005; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc875443/: accessed October 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.