Improved Electron Yield and Spin-Polarizaton from III-V Photocathodes Via Bias Enhanced Carrier Drift

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Spin-polarized electrons are commonly used in high energy physics. Future work will benefit from greater polarization. Polarizations approaching 90% have been achieved at the expense of yield. The primary paths to higher polarization are material design and electron transport. Our work addresses the latter. Photoexcited electrons may be preferentially emitted or suppressed by an electric field applied across the active region. We are tuning this forward bias for maximum polarization and yield, together with other parameters, e.g., doping profile. Preliminary measurements have been carried out on bulk and thin film GaAs. As expected, the yield change far from the bandgap ... continued below

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4 pages

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Mulhollan, Gregory A.; Bierman, John; Sci., /Saxet Surface; Brachmann, Axel; Clendenin, James E.; Garwin, Edward et al. September 14, 2005.

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Spin-polarized electrons are commonly used in high energy physics. Future work will benefit from greater polarization. Polarizations approaching 90% have been achieved at the expense of yield. The primary paths to higher polarization are material design and electron transport. Our work addresses the latter. Photoexcited electrons may be preferentially emitted or suppressed by an electric field applied across the active region. We are tuning this forward bias for maximum polarization and yield, together with other parameters, e.g., doping profile. Preliminary measurements have been carried out on bulk and thin film GaAs. As expected, the yield change far from the bandgap is quite large for bulk material. The bias is applied to the bottom (non-activated) side of the cathode so that the accelerating potential as measured with respect to the ground potential chamber walls is unchanged for different front-to-back cathode bias values. The size of the bias to cause an appreciable effect is rather small reflecting the low drift kinetic energy in the zero bias case.

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4 pages

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  • Contributed to Particle Accelerator Conference (PAC 05), Knoxville, Tennessee, 16-20 May 2005

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  • Report No.: SLAC-PUB-11194
  • Grant Number: AC02-76SF00515
  • Office of Scientific & Technical Information Report Number: 878417
  • Archival Resource Key: ark:/67531/metadc875397

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  • September 14, 2005

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  • Sept. 21, 2016, 2:29 a.m.

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  • Dec. 5, 2016, 8:46 p.m.

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Mulhollan, Gregory A.; Bierman, John; Sci., /Saxet Surface; Brachmann, Axel; Clendenin, James E.; Garwin, Edward et al. Improved Electron Yield and Spin-Polarizaton from III-V Photocathodes Via Bias Enhanced Carrier Drift, article, September 14, 2005; [Menlo Park, California]. (digital.library.unt.edu/ark:/67531/metadc875397/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.