Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster)

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We have observed three electrical potentials at the top, tunneling, and bottom junctions of GnInP{sub 2}/GaAs tandem-junction solar cells, by performing the UHV-SKPM measurement. The effect of laser illumination was avoided by using GaAs laser with photon energy of 1.4 eV for the AFM operation. We also observed higher potentials at the atomic steps than on the terraces for both p-type GaInP{sub 2} epitaxial layer and p-type GaAs substrate, and found that the potential at steps of GaAs substrate depends on the step directions.

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Jiang, C.-S.; Friedman, D. J.; Moutinho, H. R. & Al-Jassim, M. M. May 1, 2006.

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We have observed three electrical potentials at the top, tunneling, and bottom junctions of GnInP{sub 2}/GaAs tandem-junction solar cells, by performing the UHV-SKPM measurement. The effect of laser illumination was avoided by using GaAs laser with photon energy of 1.4 eV for the AFM operation. We also observed higher potentials at the atomic steps than on the terraces for both p-type GaInP{sub 2} epitaxial layer and p-type GaAs substrate, and found that the potential at steps of GaAs substrate depends on the step directions.

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1 p.

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  • Prepared for the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), 7-12 May 2006, Waikoloa, Hawaii

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  • Report No.: NREL/PO-520-39864
  • Grant Number: AC36-99-GO10337
  • Office of Scientific & Technical Information Report Number: 893117
  • Archival Resource Key: ark:/67531/metadc875010

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  • May 1, 2006

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  • Sept. 21, 2016, 2:29 a.m.

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  • Dec. 6, 2016, 4:47 p.m.

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Jiang, C.-S.; Friedman, D. J.; Moutinho, H. R. & Al-Jassim, M. M. Profiling the Built-In Electrical Potential in III-V Multijunction Solar Cells (Poster), article, May 1, 2006; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc875010/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.