GeSi strained nanostructure self-assembly for nano- and opto-electronics.

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Description

Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot towards the fabrication of more complex, potentially functional structures such as quantum dot molecules and quantum wires. This report summarizes the steps taken to improve the growth quality of our GeSi molecular beam epitaxy process, and then highlights the outcomes of this effort.

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16 p.

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Means, Joel L. & Floro, Jerrold Anthony July 1, 2001.

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Description

Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot towards the fabrication of more complex, potentially functional structures such as quantum dot molecules and quantum wires. This report summarizes the steps taken to improve the growth quality of our GeSi molecular beam epitaxy process, and then highlights the outcomes of this effort.

Physical Description

16 p.

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  • Report No.: SAND2005-0101
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/889001 | External Link
  • Office of Scientific & Technical Information Report Number: 889001
  • Archival Resource Key: ark:/67531/metadc874107

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • July 1, 2001

Added to The UNT Digital Library

  • Sept. 21, 2016, 2:29 a.m.

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  • Nov. 28, 2016, 6:54 p.m.

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Means, Joel L. & Floro, Jerrold Anthony. GeSi strained nanostructure self-assembly for nano- and opto-electronics., report, July 1, 2001; United States. (digital.library.unt.edu/ark:/67531/metadc874107/: accessed December 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.