Photoluminescence of Energetic Particle-Irradiated InxGa1-xNAlloys

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A study of the photoluminescence (PL) characteristics of In{sub x}Ga{sub 1-x}N alloys in which the Fermi level is controlled by energetic particle irradiation is reported. In In-rich In{sub x}Ga{sub 1-x}N the intensity of the PL emission initially increases with irradiation dose before falling rapidly at high doses. This unusual trend is attributed to the location of the average energy of the dangling-bond type native defects (the Fermi level stabilization energy, or E{sub FS}), which lies about 0.9 eV above the conduction band edge of InN. As a result of this atypically high position of E{sub FS}, irradiation-induced defects formed at ... continued below

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Li, S.X.; Jones, R.E.; Haller, E.E.; Yu, K.M.; Walukiewicz, W.; Ager III, J.W. et al. December 14, 2005.

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A study of the photoluminescence (PL) characteristics of In{sub x}Ga{sub 1-x}N alloys in which the Fermi level is controlled by energetic particle irradiation is reported. In In-rich In{sub x}Ga{sub 1-x}N the intensity of the PL emission initially increases with irradiation dose before falling rapidly at high doses. This unusual trend is attributed to the location of the average energy of the dangling-bond type native defects (the Fermi level stabilization energy, or E{sub FS}), which lies about 0.9 eV above the conduction band edge of InN. As a result of this atypically high position of E{sub FS}, irradiation-induced defects formed at low doses are donors, and do not act as efficient recombination centers. Thus, low dose irradiation increases the electron concentration and leads to an increase of the photoluminescence intensity. However, at higher irradiation doses, the Fermi level approaches E{sub FS}, and the defects formed become increasingly effective as a non-radiative recombination centers and the PL quenches quickly. Our calculations of the PL intensity based on the effect of the electron concentration and the minority carrier lifetime, show good agreement with the experimental data. Finally, the blue shift of PL signal with increasing electron concentration is explained by the breakdown of momentum conservation due to the irradiation damage.

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  • Journal Name: Applied Physics Letters; Journal Volume: 88; Journal Issue: 15; Related Information: Journal Publication Date: April 10,2006

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  • Report No.: LBNL--59218
  • Grant Number: DE-AC02-05CH11231
  • Office of Scientific & Technical Information Report Number: 891215
  • Archival Resource Key: ark:/67531/metadc873824

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  • December 14, 2005

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  • Sept. 21, 2016, 2:29 a.m.

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  • Sept. 30, 2016, 1:59 p.m.

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Li, S.X.; Jones, R.E.; Haller, E.E.; Yu, K.M.; Walukiewicz, W.; Ager III, J.W. et al. Photoluminescence of Energetic Particle-Irradiated InxGa1-xNAlloys, article, December 14, 2005; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc873824/: accessed December 13, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.