The UNT Honors College is dedicated to enriching the undergraduate academic experience for talented, motivated, and well-prepared students. The college offers its members many benefits, including challenging classes, training in research methods and skills, eligibility to live in Rawlins Hall or Honors Hall, and a supportive social and academic environment.
This paper discusses research on the growth and characterization of aluminum nitride (AlN) nanowires.
Physical Description
32 p.
Notes
Abstract: Nanotechnology is a rapidly growing field, with nanowires during the advancement of our modern electronics. Aluminum nitride (AlN) wires stand out from other group III-V semiconductors due to their large piezoelectric coefficient and high thermal conductivity. Due to the nature of aluminum (Al), growth of these wires has proven problematic, and optimizing their different characteristics even more so. I intend to grow AlN wires at a lower temperature than other researchers have in order to prevent some of the defects from forming. I will also be growing on sapphire, a substrate better suited to the well arrayed growth of the wires than silicon (Si).
The Growth and Characterization of Aluminum Nitride (AlN) Nanowires [Presentation], ark:/67531/metadc93259
Collections
This paper is part of the following collection of related materials.
UNT Scholarly Works
Materials from the UNT community's research, creative, and scholarly activities and UNT's Open Access Repository. Access to some items in this collection may be restricted.
Presentation for the 2012 University Scholars Day at the University of North Texas discussing research on the growth and characterization of aluminum nitride (AIN) nanowires.
Relationship to this item: (Is Version Of)
The Growth and Characterization of Aluminum Nitride (AlN) Nanowires [Presentation], ark:/67531/metadc93259