Using Measurements of Fill Factor at High Irradiance to Deduce Heterobarrier Band Offsets: Preprint

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Using a 2D device simulation tool, we examine the high irradiance behavior of a single junction, GaAs concentrator cell as a function of the doping in the back surface confinement layer. The confinement layer is designed to be a barrier for both holes and electrons in the base of the solar cell. For a p-type base we show that the FF of the cell at high concentrations is a strong function of both the magnitude of the valence band offset and the doping level in the barrier. In short, for a given valence band offset (VBO), there is a critical ... continued below

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6 p.

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Olson, J. M.; Steiner, M. A. & Kanevce, A. July 1, 2011.

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Using a 2D device simulation tool, we examine the high irradiance behavior of a single junction, GaAs concentrator cell as a function of the doping in the back surface confinement layer. The confinement layer is designed to be a barrier for both holes and electrons in the base of the solar cell. For a p-type base we show that the FF of the cell at high concentrations is a strong function of both the magnitude of the valence band offset and the doping level in the barrier. In short, for a given valence band offset (VBO), there is a critical barrier doping, below which the FF drops rapidly with lower doping. This behavior is confirmed experimentally for a GaInP/GaAs double heterostructure solar cell where the critical doping concentration (at 500 suns) in the back surface confinement layer is ~1e18 cm-3 for a VBO of 300 meV.

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6 p.

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  • Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), 19-24 June 2011, Seattle, Washington

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  • Report No.: NREL/CP-5200-50737
  • Grant Number: AC36-08GO28308
  • Office of Scientific & Technical Information Report Number: 1022411
  • Archival Resource Key: ark:/67531/metadc847091

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  • July 1, 2011

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  • May 19, 2016, 3:16 p.m.

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  • April 6, 2017, 12:51 p.m.

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Olson, J. M.; Steiner, M. A. & Kanevce, A. Using Measurements of Fill Factor at High Irradiance to Deduce Heterobarrier Band Offsets: Preprint, article, July 1, 2011; Golden, Colorado. (digital.library.unt.edu/ark:/67531/metadc847091/: accessed December 14, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.