Low Cost Production of InGaN for Next-Generation Photovoltaic Devices

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Description

The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.

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Nick M. Sbrockey, Shangzhu Sun, Gary S. Tompa, July 9, 2012.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 29 times . More information about this report can be viewed below.

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Description

The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.

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  • Report No.: DOE/EE0003493-1
  • Grant Number: EE0003493
  • DOI: 10.2172/1046340 | External Link
  • Office of Scientific & Technical Information Report Number: 1046340
  • Archival Resource Key: ark:/67531/metadc846028

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Office of Scientific & Technical Information Technical Reports

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Creation Date

  • July 9, 2012

Added to The UNT Digital Library

  • May 19, 2016, 9:45 a.m.

Description Last Updated

  • Dec. 9, 2016, 10:17 p.m.

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Nick M. Sbrockey, Shangzhu Sun, Gary S. Tompa,. Low Cost Production of InGaN for Next-Generation Photovoltaic Devices, report, July 9, 2012; United States. (digital.library.unt.edu/ark:/67531/metadc846028/: accessed December 14, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.